I'm absolutely certain the MJE die is physically larger. For one thing, it must conduct more thermal energy to the case.
Another tip-off is the difference in DC current-gain, and that in-turn accounts for part of the 1000x difference in leakage current. I believe leakage current is directly proportional to the area of the base (my device physics textbook is at work, and I'm at home recalling a class I took in 1983...); the actual leakage-current density is an exponential equation based on all sorts of properties of the silicon. -- You received this message because you are subscribed to the Google Groups "neonixie-l" group. To unsubscribe from this group and stop receiving emails from it, send an email to [email protected]. To view this discussion on the web, visit https://groups.google.com/d/msgid/neonixie-l/2b955c0a-2fec-48e8-9dd0-9153b1daa42c%40googlegroups.com.
