On Thursday, April 23, 2020 at 3:10:36 PM UTC-7, gregebert wrote: > I'm absolutely certain the MJE die is physically larger. For one thing, it must conduct more thermal energy to the case.
I am inclined to agree, but if it were me, I would be willing to invest $1.08 and a half hour in the experiment. > Another tip-off is the difference in DC current-gain, and that in-turn accounts for part of the 1000x difference in leakage > current. I believe leakage current is directly proportional to the area of the base (my device physics textbook is at work, > and I'm at home recalling a class I took in 1983...); the actual leakage-current density is an exponential equation based > on all sorts of properties of the silicon. All other things being equal, I would expect leakage to be roughly proportional to the chip are, which would not account for the 1000X. Also, some specs in the data sheet are very loose, like guaranteed maximum leakage. If the base and emitter are both diffused, I would expect these variations to swamp out the area. How do they get the HV capability? If it is an epi base layer, there would be variations due to the quality of the epitaxy that could affect the leakage. That is a long way of saying that you might be right, but I don't know. -- You received this message because you are subscribed to the Google Groups "neonixie-l" group. To unsubscribe from this group and stop receiving emails from it, send an email to [email protected]. To view this discussion on the web, visit https://groups.google.com/d/msgid/neonixie-l/0c33dfbc-4632-4021-ba73-ea6be730dce0%40googlegroups.com.
