Slightly off-topic, but we are going to be needing memory. spin transfer torque magnetoresistive random access memory (STT-MRAM)
"improved speed while reducing power consumption by 90%" Less power than SRAM and non-volatile. But...I must be reading the graph wrong, looks like 300ns? Isn't that obscenely slow for 2012? Also isn't clear if they have actually built and tested it or just simulated it. http://www.xbitlabs.com/news/memory/display/20121210213212_Toshiba_s_STT_MRAM_Memory_Element_Promises_World_s_Best_Power_Consumption.html _______________________________________________ Open-graphics mailing list [email protected] http://lists.duskglow.com/mailman/listinfo/open-graphics List service provided by Duskglow Consulting, LLC (www.duskglow.com)
