Dear, Is the material under study (ie, bulk amorphous silicon) has a direct electronic gap or not?
Karim
Hello,
I calculated the band structure of bulk amorphous silicon (64 atoms
tetrahedrically coordinated). I found an HOMO-LUMO band gap of about 0.7 eV.
Then I performed the OpticalCalculation, but I have that the resulting
imaginary dielectric function has a peak at E<0.7. How is this possible? I
expect that each valence-to-conduction transition must be larger than the
bang-gap!
Roberto
