Indirect (band structure attached) R
In date 4/3/11 15:23:46, karim rezouali wrote: > Dear, > > Is the material under study (ie, bulk amorphous silicon) has a direct > electronic gap or not? > > Karim > > > Hello, > > I calculated the band structure of bulk amorphous silicon (64 atoms > tetrahedrically coordinated). I found an HOMO-LUMO band gap of about 0.7 > eV. Then I performed the OpticalCalculation, but I have that the resulting > imaginary dielectric function has a peak at E<0.7. How is this possible? I > expect that each valence-to-conduction transition must be larger than the > bang-gap! > > Roberto
<<attachment: a-Si_bands.png>>
