>> Hello Markus,
>> 
>> sounds veeeeery strange to me.
>> 

MR> Hello Jan and all the others,

MR> yes, this article is quite extraordinary, but PIN-Diodes ARE INDEED used 
MR> to detect radiation. I don't know whether they are directly coated by a 
MR> szintillation substance. The author replaced the glass window with a 10� 
MR> Al-coated foil to keep the light outside (but I don't know wheter this 
MR> foil also acts as a szintillatior). I would really like to give this 
MR> circuit a try before looking for such a special detection diode.

MR> Further researches about the author braught up the following results: 
MR> The article was published in "Electronics Designer's Casebook No.3 for 
MR> the period Feb 16, 1978 to Jan 4, 1979". The author doesn't work for the 
MR> indicated institute in poland any more, not quite a surprise. So I can't 
MR> contact him directly.

MR> But this tells us that the diodes are at least 25 years old and probably 
MR> of eastern europe type (former CCCP I think, but not sure). So if anyone 
MR> of the list members has an old data book on the shelf, please take a 
MR> look ...

MR> Today's photodiodes should have a higher performance/sensitivity, so 
MR> would a general purpose type (which one?) be ok for a simple test of the 
MR> circuit?

MR> Best Regards
MR> Markus

May I clean up a bit?
Indeed any pn junction is sensitive to ionizing radiation, independent
of the type of radiation. alpha, beta and gamma do all create
electron-hole pairs in the semiconductor material, while loosing some
energy themselves. The energy loss per created eletron-hole pair is
about 3x the band gap energy of the material, i.e. 3x 1.2eV in the
case of silicon. If the electron-hole pair is created in or near the
depletion region of the junction, the external field will separate
electrons and holes and accelerate them towards the oppositely charged
electrodes. These carriers appear then as an electric current through
the diode.
There are special diodes for these purposes around which have an
extremely wide depletion region by the in-diffusion of lithium into
the semiconductor material - they can even fully stop an alpha
particle in the active region and the full energy of the particle will
be converted. This allows an accurate measurement of the energy of the
incoming alpha particles. A normal pn or even pin diode will only
absorb part of the energy in the sensitive region and can still be
used to detect the presence of radiation.

For Markus' project _any_ pn or pin diode will do if he can expose the
junction to the incoming radiation. As described in the article a
diode in a metal can with glass window is easiest to use, since you
can remove the front window and replace it by an alpha-transparent
material, such as the mylar foil described in the article - of course
it has to be really light-tight, otherwise you will detect anything
else as well.

Gamma and X-ray radiation has very little energy loss in most
semiconductor materials, requiring very thick depletion regions to be
detected. Since these are hard/impossible to manufacture and also very
sensitive to thermal noise, scintillator materials are used to convert the
incoming radiation into visible light which is easily absorbed in the
junction.

Just a rough estimation of the absorption depth in semiconductors:
alpha 1-10um
beta  5-50um
gamma several mm

Uwe.

-- 
Author: Uwe Zimmermann
  INET: [EMAIL PROTECTED]

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