Re: [neonixie-l] Re: First Nixie Project Schematic Review

2015-06-12 Thread petehand
I was looking at my posts again and see I missed out a necessary tip. The 
ADC conversion period *must be longer* than the PWM rate, otherwise it may 
go crazy making multiple changes to the period in the same cycle. The ADC 
and the PWM don't need to be synchronized. I find making the conversion 
time between three and four times the PWM period gives a good balance 
between transient response and good regulation.

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Re: [neonixie-l] Re: First Nixie Project Schematic Review

2015-06-11 Thread petehand
The FET current is governed not by the output power, but by the inductance 
and its time constant. The output voltage is immaterial. Once the magnetic 
energy is stored in the inductor and the current cuts off, that energy WILL 
be dumped, by hook or by crook, even if it takes a million volts to do it. 
If you don't have an output capacitor it will rise until something breaks 
down, which is usually the FET. So it's meaningless to say it needs a duty 
cycle of X to achieve Y voltage, since it can achieve any Y with any X in a 
single cycle. With the capacitor in circuit, it will charge it higher by 
Q/C volts every cycle (where Q = It, the charge generated by the collapsing 
magnetic field). The calculation you need to apply is how much input power 
at 24V is needed to maintain the capacitor output voltage at the output 
current you desire. If it's 200v at 35mA, 7000mW, then that's the power you 
have to put in (plus losses) at 24V - say 350mA. That's 350mW dissipation 
at the optimistic typical Rds(on) for 100mA. But 350mA is an average, 
delivered in pulses of much higher current, and until the capacitor is 
charged and achieves regulation those pulses will be longer and heavier. 
The FET will be drawing over an amp in pulses, will have Rds(on) more in 
the region of 10 ohms and will rapidly heat up, and as it heats up its 
Rds(on) increases, so it gets hotter, and then it unsolders itself. Believe 
me, I've seen it happen and still have the holes burned in my fingertips to 
remind me. You should be looking for an FET with an Rds(on) in the 100 
milliohm range at 1 amp. You can experiment and find out for yourself but I 
strongly recommend the big fat IRL640 - it's threshold is in the 2V range 
so it should work. There's another reason for this, which is the inductive 
time constant, L/R. As the on resistance increases the time constant gets 
smaller, so you need higher inductance to keep it from saturating during 
the on period.

Controlling the on time is the *only* thing that affects the output 
voltage. Less on time means less magnetic energy stored in the inductor, so 
less charge dumped into the capacitor each cycle. But you must always have 
*some* off time, for that energy to be dumped, as if you don't limit it the 
PWM can run up to the point where the inductor doesn't have time to 
discharge fully and still retains some flux. Then next cycle it ramps to a 
higher flux density, and higher every time, until it saturates and your FET 
goes up in smoke. My rule of thumb is 20% of the cycle time. You can have 
less, but the longer the on time, the higher the FET current.

I set the PWM pin to an input because that can be done in a single 
instruction, whereas to drive it low you first have to disable the PWM, and 
then later it has to be enabled again, which is an unnecessary 
complication. I just let the PWM continue to run with its output disabled 
and let the resistor hold the FET off.

If you can run the PWM at 200kHz, good luck. With AVRs at a modest clock 
rate that doesn't allow enough counts for regulation, but with a gigahertz 
ARM I guess that's not a problem. However, the gate capacitance of the FET 
has to be driven, and that too has a time constant. The turn on time is 
unimportant but the turn off time is of the highest importance, since 
during the interval from where the gate starts to pinch until it shuts off 
completely, all that stored magnetic energy is being used to heat up the 
FET, not being dumped into the output. There is always some turn-off loss, 
every cycle. When the cycle time is 25us you only pay this fare 40k times a 
second. At 5us you'll pay five times as much. It takes a lot of skill to 
reduce that loss and it really only became practical to run converters 
above 100kHz when the switches could be integrated. 200kHz is a worthy aim 
but a very long drive, across water with deep bunkers on the other bank.




On Wednesday, June 10, 2015 at 12:45:41 PM UTC-7, Brian wrote:

 Thank you very much, Pete, for the insights!  It will be great to have 
 someone that's done this before as a resource.  I have a few questions.

 First, I did think about driving the FET from 3.3V, so I selected it 
 carefully.  I am using the Vishay TN2404K, and assuming a Vgs of 3.3V, it 
 looks like Rds(on) is about 2.3 ohms:


 https://lh3.googleusercontent.com/-C8b3V6gWFgY/VXhR1u8tLeI/VM4/xpHLMYM7F0s/s1600/TN2404K_rdson.png


 Assuming 35mA max current draw (ballparking 4 IN-18 tubes as worst case), 
 the voltage drop across the FET would be about 81mV, and the power 
 dissipation about 3mW.  The datasheet says the FET is capable of 360mW of 
 dissipation (at room temp), so I felt pretty good about using them. Is 
 there something I am missing there?

 (As a cheaper alternative I may use the BSS131, which I am already using 
 to drive the nixie channels.  Making the same assumptions, Rds(on) is about 
 10.3 ohms, which a voltage drop of 361 mV, and power dissipation of about 
 13mW, 

Re: [neonixie-l] Re: First Nixie Project Schematic Review

2015-06-11 Thread gregebert
If you need a good MOSFET with a low Vgs(on), consider the DMN6040SVT. It 
has a low Rds(on), around 60 milliohms. My wristwatch uses this for the 
DC-DC converter for these reasons, and also because it has very low 
leakage. I drive the gate at 3.2V .

BUT.if you use this device, you must use a transformer (basically 2 
coupled inductors), to reduce the kickback spike that occurs while the HV 
cap is charging. The DMN6040SVT will only tolerate 60V, so if you want to 
generate 180V, you will want a transformer that is at least a 4:1 turns 
ratio. Mine is 10:1 .

Finding low Vgs(on) devices with a high Vds is difficult; there are not 
very many and this was the best one I could find for my application.

You may want to look into circuit changes that will give you a higher Vgs.

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[neonixie-l] Re: First Nixie Project Schematic Review

2015-06-09 Thread gregebert
Others have used the HV5522 (I'm designing with the HV5530) because it 
combines the shift-register with the HV driver. The only drawback is that 
you have to level-shift the inputs to the HV55xx to 12V. I'm using 
comparators for that; have yet to run spice simulations to optimize for 
noise-rejection, etc.

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[neonixie-l] Re: First Nixie Project Schematic Review

2015-06-09 Thread Brian
Thanks for letting me know that parts exists.  I didn't know they were 
making combo parts like that.  I will probably stick with the design I have 
for now...Newark has the BSS131 on sale for $0.063, and the 74HC595 on sale 
for $0.066, which means 32-bits of output costs $2.28.  The lowest price I 
could find for the HV5522 was $5.53, though I guess the cost is made up in 
solder time :-).

(I also already have the 24V adapter and no 12V rail.)

Thanks for the comments, you should post your preliminary design too!

-Brian

On Tuesday, June 9, 2015 at 4:52:53 PM UTC-4, gregebert wrote:

 Others have used the HV5522 (I'm designing with the HV5530) because it 
 combines the shift-register with the HV driver. The only drawback is that 
 you have to level-shift the inputs to the HV55xx to 12V. I'm using 
 comparators for that; have yet to run spice simulations to optimize for 
 noise-rejection, etc.


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Re: [neonixie-l] Re: First Nixie Project Schematic Review

2015-06-09 Thread David Forbes

Brian,

There are people on this list who have actually built such power supplies. They 
would know better than I would, what's the best protection against wayward boost 
drivers.


On 6/9/2015 2:55 PM, Brian wrote:

Ha, that's a good point, thanks!  Do you think I should throw a pulldown on
the gate of Q1 to solve that?

On Tuesday, June 9, 2015 at 5:46:52 PM UTC-4, nixiebunny wrote:


Brian,

Other than that, it looks like it will work, as long as you have a
guarantee
that your boost converter FET gate will not be enabled for longer than a
few
microseconds incase the CPU goes stupid.





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Re: [neonixie-l] Re: First Nixie Project Schematic Review

2015-06-09 Thread Brian
Ha, that's a good point, thanks!  Do you think I should throw a pulldown on 
the gate of Q1 to solve that?

On Tuesday, June 9, 2015 at 5:46:52 PM UTC-4, nixiebunny wrote:

 Brian, 

 A lower soldering time option for the transistors is the TD62084, which 
 has 
 eight 50V transistors in a 18 pin DIP or TSSOP. The SN75468 has seven 100V 
 transistors in a 16 pin DIP. 

 Other than that, it looks like it will work, as long as you have a 
 guarantee 
 that your boost converter FET gate will not be enabled for longer than a 
 few 
 microseconds incase the CPU goes stupid. 

 There is a story about that - the folks who beat the roulette wheel using 
 physics (read The Eudaemonic Pie) built a computer in a bra, but the 
 tapping 
 solenoids that communicated to the wearer would stay engaged when the CPU 
 crashed. Hot! Ouch! A series capacitor and a pulldown resistor on the 
 transistor's input solved that problem. 

 On 6/9/2015 2:23 PM, Brian wrote: 
  Thanks for letting me know that parts exists.  I didn't know they were 
  making combo parts like that.  I will probably stick with the design I 
 have 
  for now...Newark has the BSS131 on sale for $0.063, and the 74HC595 on 
 sale 
  for $0.066, which means 32-bits of output costs $2.28.  The lowest price 
 I 
  could find for the HV5522 was $5.53, though I guess the cost is made up 
 in 
  solder time :-). 
  
  (I also already have the 24V adapter and no 12V rail.) 
  
  Thanks for the comments, you should post your preliminary design too! 
  
  -Brian 
  
  On Tuesday, June 9, 2015 at 4:52:53 PM UTC-4, gregebert wrote: 
  
  Others have used the HV5522 (I'm designing with the HV5530) because it 
  combines the shift-register with the HV driver. The only drawback is 
 that 
  you have to level-shift the inputs to the HV55xx to 12V. I'm using 
  comparators for that; have yet to run spice simulations to optimize for 
  noise-rejection, etc. 
  
  



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Re: [neonixie-l] Re: First Nixie Project Schematic Review

2015-06-09 Thread David Forbes

Brian,

A lower soldering time option for the transistors is the TD62084, which has 
eight 50V transistors in a 18 pin DIP or TSSOP. The SN75468 has seven 100V 
transistors in a 16 pin DIP.


Other than that, it looks like it will work, as long as you have a guarantee 
that your boost converter FET gate will not be enabled for longer than a few 
microseconds incase the CPU goes stupid.


There is a story about that - the folks who beat the roulette wheel using 
physics (read The Eudaemonic Pie) built a computer in a bra, but the tapping 
solenoids that communicated to the wearer would stay engaged when the CPU 
crashed. Hot! Ouch! A series capacitor and a pulldown resistor on the 
transistor's input solved that problem.


On 6/9/2015 2:23 PM, Brian wrote:

Thanks for letting me know that parts exists.  I didn't know they were
making combo parts like that.  I will probably stick with the design I have
for now...Newark has the BSS131 on sale for $0.063, and the 74HC595 on sale
for $0.066, which means 32-bits of output costs $2.28.  The lowest price I
could find for the HV5522 was $5.53, though I guess the cost is made up in
solder time :-).

(I also already have the 24V adapter and no 12V rail.)

Thanks for the comments, you should post your preliminary design too!

-Brian

On Tuesday, June 9, 2015 at 4:52:53 PM UTC-4, gregebert wrote:


Others have used the HV5522 (I'm designing with the HV5530) because it
combines the shift-register with the HV driver. The only drawback is that
you have to level-shift the inputs to the HV55xx to 12V. I'm using
comparators for that; have yet to run spice simulations to optimize for
noise-rejection, etc.





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