One issue with opamps may be the distortion as few of the high frequency ones have distortion data for more than 2Vpp output. Its can be little optimistic to scale from this if they plot distortion vs input (or output level) or give IP2 and IP3 specs.

+10dB in 50 ohms requires 4V pp at the opamp output if the output impedance is matched to the coax.

Yes, transformers make the design much easier as it allows use of single transistor CE stages with series transformer feedback to set the output impedance whilst not requiring excessive collector current. At 10MHz the reverse isolation of such a stage can easily be 40dB or so.

Bruce

Bob Camp wrote:
Hi

There's also the "throw everything at it" approach.

Use something like common base stages for the input and op amps for the 
outputs. Boost the level into the op amps and pad it at the outputs. You might 
get what you need. More parts than a pure op amp design, more current. Likely 
easier to get running.

Lots easier to do with a couple transformers in there.

Bob


On Feb 12, 2010, at 11:02 PM, Bruce Griffiths wrote:

The only data available seems to be John Ackermann's measurements on the TADD-1 
distribution amp.
Unfortunately the opamp used is now obsolete or about to be.
Most recent discrete designs (not the HP5087 amplifiers) that I have seen phase 
noise data for, have significantly lower flicker phase noise and phase noise 
floors, particularly at 10MHz.

Bruce

Bob Camp wrote:
Hi

I have no data, but I believe that in the real application, the phase noise 
would not be degraded by a good low noise RF op amp / buffer amp. About all you 
can do for flicker noise data is to look at what they do supply and make an 
guess based on how the noise rolls up over the range they do show.

An op amp circuit would certainly would take fewer parts, and likely more 
current. No free lunch ....

Bob


On Feb 12, 2010, at 10:11 PM, Bruce Griffiths wrote:


In the later version the input amplifier has a gain of 2x and the output 
amplifiers have unity gain.

Whilst the reverse isolation (and output impedance) can be improved by using a 
complementary symmetry emitter follower output stage, one has to ask at that 
point is the performance gain worth it?

One has then in effect built a high open loop gain discrete current feedback 
opamp that has a somewhat lower input noise than a wide band IC opamp but it0 
uses more components.

The problem with wide bandwidth opamps is there is very little data available 
on their RF flicker noise.

The measurement data I have seen for an isolation amp using a 2N5179 and a 
2N3904 in a Sziklair pair configuration as the input stage indicates that it 
doesn't seem to noticeably degrade the phase noise of a 10811A. However no 
residual phase noise measurements have been made.

Bruce

Bob Camp wrote:

Hi

Since it's the input stage, it's likely the point most impacted by a higher 
flicker noise part. That might make one want to look at alternatives.

Of course, it's not real clear that a super low noise amp is needed in this 
case.

Bob

On Feb 12, 2010, at 8:46 PM, Bruce Griffiths wrote:



The series RC to ground keeps the high frequency impedance seen by Q1 and Q7 
low so that the base current noise which increases significantly as the 
frequency approaches the ft of these transistors.
However such a series RC network does little to suppress the the rise due to 
gain peaking.
A shunt capacitor from the output stage collectors to the output stage bases is 
much more effective for the 2x gain stage.

Such a capacitor increases the noise for the 1x gain White emitter follower.
Using an input transistor with higher bandwidth is more effective in this case.

Bruce

Bob Camp wrote:


Hi

I suspect your noise spike can be cured by a series R-C to ground from the 
junction of Q1 base, Q7 base and all the other stuff. Something is going to 
have to set a high frequency roll off. With no coils some combo of R and C is 
going to have to do it.

You might also try returning all of the upper emitter resistor bypasses to 
ground rather than B+. Another alternative would be emitter to emitter bypass 
as shown on the JPL schematic. I'm guessing both would improve isolation in a 
real world circuit.

Bob


On Feb 11, 2010, at 8:34 PM, Bruce Griffiths wrote:




life speed wrote:



Message: 2
Date: Fri, 12 Feb 2010 12:12:29 +1300
From: Bruce Griffiths<[email protected]>
The output (collectors of Q5, Q6 emitter of Q4) of the input amplifier
sets the dc voltage at the inputs ( Q1 base, Q7 base respectively) of
the output amplifiers.

The circuit consists of a unity gain input amplifier (Q4, Q5, Q6) that
drives a pair of output amplifiers (Q1, Q2, Q3 and Q7, Q8, Q9
respectively) each with a gain of 2x (6dB).
The input amplifier is essentially a white emitter follower with a
complementary symmetry output stage (shown in transistor electronics
books from the 1960's) where an input CE transistor drives a
complementary pair of CE transistors with feedback from the common
collectors of the 2 output transistors to the input transistor emitter.
In effect its merely a very simple unity gain opamp. Its usually best to
ensure that the CE output stage pair provide the dominant open loop
pole. Using a higher ft (2 to 3x)  input transistor than the output pair
is the usual way of ensuring this.

Well, it is so obvious now that you explained it.  I had forgot about the need 
for one of the stages to set the dominant pole.

Thanks Bruce and Bob for sharing your obsession with frequency controls.  I'll 
simulate this further, and have a prototype PCB built within the next few 
weeks.  I did notice the resistor at the base of Q2,5,8 is responsible for 
significant noise.  I'll have to be careful with the bias circuit.

Have to get busy for now, but I will report back with results.

Best regards,

Clay





Clay

One can always use a smaller resistor in series with an RF choke that has no 
resonances in the region of interest.

The attached circuit schematic illustrates one method of biasing for which the 
emitter current of the input transistor can be largely sourced via a resistor 
rather than from the collector current of the npn output transistor.

My simulations indicate if that one uses 2N3904's as the input device rather 
than the 2N5179's shown that there is an enormous peak in the output noise 
spectrum at around 150-200MHz or so.
When the 2N5179 is used this noise peak is much smaller and broader.

Use the same bias divider bypassing techniques that NIST used including the use 
of electrolytic caps (they used tantalum caps) to reduce the low frequency 
noise from the power supply. The ceramic bypass caps ensure sufficient 
isolation between stages.
Simulating the reverse isolation with realistic component parasitics is always 
informative/useful.

Bruce
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