On Aug 29, 2007, at 9:06 AM, Michel Jullian wrote:
with the help of excess electron screening and channel alignment.
An experiment where the probability of such encounters would be
increased, e.g. by back-loading the cathode to maintain a steady
front deloading flux of deuterons while electrolyzing,
This is just the back side cell concept with the terms "front" and
"back" reversed.
Possibly, ref please.
On Aug 8, 2007, at 12:18 PM, Horace Heffner wrote:
I certainly don't agree it is necessarily the field that counts in
Fig. 1 when it comes to electron fugacity. Referring to Fig. 1
again, if the "++" electrode is at +1,000,000 V and the "x"
electrode is at +980,000 V, the electron fugacity in the X
electrode will be reduced from what it would be if the "++"
electrode were at -1,000,000 V and the "x" electrode is at
-1,020,00 V.
If you read toward the end of the article (especially considering
Figures 2 and 3) I think you will see that electron fugacity is
very important, even in small increments. Maybe I should have
emphasized that point more. It is not only important at the back
side surface, but also internally to the electrode - where it is
maintained by the loaded hydrogen. The last statement may seem
trivial, but it is not trivial. An understanding of this I think is
critical to design. An excess electron can be in effect be
introduced subsurface at the back side of the cathode by tunneling
of a hydrogen out of the metal, across a dielectric boundary,
*without its ionically bound electron* (a feat made energetically
possible by the back side surface charge which then neutralizes the
hydrogen). This departure of a hydrogen from the lattice
momentarily leaves an excess electron behind in the lattice which
can be the site of deflation fusion.
The excess electron, in a manner similar to a hole, can actually
migrate backwards (toward the font side) due to the tendency for
the hydrogen to diffuse toward the lower pressure (lower hydrogen
fugacity) back side. Provided there are no electron deficits
inside the cathode to stop it (i.e. no conduction band electrons
stripped from the inside to meet the surface charge demanded by the
external field) this chain of diffusion can work its way toward the
front side of the cathode. How far is a question of statistics.
What is different about this kind of chain of diffusions is the
excess electron avoids the need for the *simultaneous* tunneling of
the hydrogen nucleus and its ionically bonded mate. The hydrogen
(alone) tunneling is energetically allowed because a target site
electron is already there. It is also energetically positive
because the orbital stress on the upstream hydrogen is much larger.
The free electron will not tend to tunnel backward toward the
oncoming hydrogen because there is already a paired electron there.
It may tend to move in the opposed direction, but there is with
good probability an ionically bound electron there blocking the
conduction bands. Further, there is a current of electrons moving
toward the back side. An electron displaced is likely replaced by
an electron from the cathode current. The net effect of all this
tunneling I think is to increase the probability of deflation
fusion. When a Pd site has a free electron, there can be 4
candidate hydrogen nuclei to tunnel to it. There are 4 adjacent
tetrahedral sites to every tetrahedral site to provide tunneling
candidates, and if all are occupied then three of them are
upstream, pressure wise.
It is notable that hydrogen loading has far more to do with
electron density than surface potential can. Given the surface
charge Q for a capacitor plate of area A in field E is:
Q = epsilon_0 E A
we have:
E = Q / (epsilon_0 A)
and, in a fully loaded Pd lattice with cells of dimension about 3
angstroms we get a field of
E = q / (epsilon_0 (3 angstroms)^3) = 2x10^11 V/m
In other words, given no hydrogen nuclei, it would take a 2x10^11 V/
m field to obtain the same electron density as in a fully loaded
lattice, just at the surface - and that electron surface charge is
repeated in planes separated by 3 angstroms throughout. It is thus
clearly important then, if possible, that charge transactions at
the surface boundary, caused by relatively few electrons, then
cause further transactions at depth. I think the back side approach
causes this.
In ordinary electrolysis the flow directions seem to me to be
wrong. At the interface the hydrogen hops toward a free electron
and things stop right there. The diffusion is then essentially
through combined motion of the hydrogen and its ionically bound
electron. When diffusion is initiated from the back side as shown,
the electrons don't have to tunnel and chains of reactions can be
catalyzed. Note the electron remains whether fusion occurs or not.
On Aug 8, 2007, at 1:48 PM, Horace Heffner wrote:
I wrote: "In ordinary electrolysis the flow directions seem to me
to be wrong. At the interface the hydrogen hops toward a free
electron and things stop right there. The diffusion is then
essentially through combined motion of the hydrogen and its
ionically bound electron. When diffusion is initiated from the
back side as shown, the electrons don't have to tunnel and chains
of reactions can be catalyzed. Note the electron remains whether
fusion occurs or not."
This would have been much better phrased: "In ordinary electrolysis
the flow conditions are wrong. At the interface the hydrogen hops
toward a free electron in the cathode and things stop right there.
The diffusion is then essentially through combined motion of the
hydrogen and its ionically bound electron. Is is simply fusion
through metal until nearly full loading occurs. However, when
things are just ready to get going for fusion, i.e. hydrogen
fugacity becomes high, the diffusion rate drops because the cathode
is full."
"When diffusion is initiated from the back side as shown, the
electrons don't tend to tunnel towards the cathode electron
current, and chains of reactions can be catalyzed whereby waveform
collapse occurs on a target destination electron. Note the
catalytic electron remains as an unmatched spare whether fusion
occurs or not. When back side tunneling (i.e. de-loading) is
accomplished with a sufficient tunneling barrier, the flow is
maintained at a constant rate, and need not even begin until the
cathode is fully loaded. In this way the heat is turned up when
the fire is stoked in stead of the stoking choking off the heat."
Note that back side cell fusion is more of a volume effect than a
surface effect.
A significant problem remains and that is helium removal. That
might be cured by using a lattice that can accommodate helium
removal, i.e. helium diffusion. At least using the back side de-
loading technique the helium has an some opportunity to diffuse
out, is close to the "exit", and the diffusion pressure is in the
right direction.
It would be interesting to see if gas phase fusion of de-loading
hydrogen could be catalyzed at the tips of small dendrites on the
back side. That would remove the helium waste problem altogether.
n Aug 9, 2007, at 2:24 PM, Horace Heffner wrote:
The backside de-loading scheme seems to have good rationale within
the deflation fusion model. The problem is to achieve it in a
practical way.
The key is establishing a back-side diffusion barrier, and using
the right cross-barrier potential in order to match the de-loading
and loading rates so as to sustain high hydrogen fugacity. It is
also an objective to provide a high electron charge density
immediately opposite the de-loading barrier. One means of
increasing charge density is to increase field strength by using a
high dielectric strength material opposite the barrier.
Now for a surprise. One way to achieve many of these objectives is
to make the back side an anode immersed in a water. The water acts
as the dielectric. The field strength across the two layer water
interphase can be well over 10^6 V/m.
The anodic diffusion barrier can be deposited and even maintained/
healed by anodization. The target for hydrogen tunneling then is
OH- molecules in the interphase, and any free electrons that might
be ionized off them and attached to the anodized barrier.
One problem with this approach is keeping the electrons from
tunneling across the backside barrier to the hydrogen instead of
the hydrogen tunneling through the back side barrier to the
electrons. The down side to electron tunneling through the
backside barrier is (1) deflation fusion is accomplished best by
simultaneous deuteron tunneling to an electron and (2) fusion on
the front side of the barrier will cause disruption of the lattice,
destruction of the barrier, and possible helium blockage.
Preventing the problems should be possible by energetically denying
them by driving front side electrolysis at a much higher voltage
once loading is complete.
Operating with a superimposed pulse, on both the front and back
side potentials, to trigger hydrogen barrier tunneling, may be
efficient because it gives the lattice time to diffuse replacement
hydrogen, backside gas a chance to dissipate, and the interphase to
recover.
On Aug 9, 2007, at 2:32 PM, Horace Heffner wrote:
An alternative may be, on the back side, to use pulsed AC on top of
a DC trickle current used to sustain the anodized layer. Just
brainstorming a bit.
On Aug 9, 2007, at 2:41 PM, Horace Heffner wrote:
An alternative may be, on the back side, to use pulsed AC on top of
a DC trickle current used to sustain the anodized layer.
Very high frequency high voltage AC intervals with low duty cycles,
on the back side, would cause tunneling directions across the
backside of the barrier to switch directions, alternating many
times per volume diffused, and thereby increasing fusion prospects
per diffused atom.
On Aug 9, 2007, at 2:45 PM, Horace Heffner wrote:
An alternative may be, on the back side, to use pulsed AC on top of
a DC trickle current used to sustain the anodized layer.
Very high frequency high voltage AC intervals with low duty cycles,
on the back side, would cause tunneling directions across the
backside of the barrier to switch directions, alternating many
times per volume diffused, and thereby increasing fusion prospects
per diffused atom. It also increases the probability of OH- de-
ionization, loosing free electrons to attach to the backside
diffusion barrier.
See also discussion of Figures 2 and 3 and the "THE BACK SIDE CELL"
and "BACKSIDE DE-LOADING ISSUES" sections of:
http://www.mtaonline.net/~hheffner/DeflationFusion.pdf
THE BACK SIDE CELL
The method of applying high electron fugacity to deuterium loaded
cathodes has the
objective of creating an energy focusing effect, forcing co-centered
wave function
collapse, resulting in deflation fusion. The objective is to create
simultaneously a
high deuteron fugacity and electron fugacity. Fugacity of a particle
type in a given
environment is similar to pressure in that it is a measure of the
energy required to
add one more such particle to that environment. It is of interest
that as electron
density increases, the fugacity of a given amount of loaded hydrogen
decreases.
Increasing electron fugacity increases the loading feasible with a
given amount of
electrolysis energy, though adding one particle of each increases the
fugacity of both.
The application of extreme fields to the back side of a loaded
cathode is one way to
increase electron fugacity. That is to say a cathode can be loaded
electrolytically
from one side, the electrolyte side, and yet be a charged to millions
of volts at the
back side surface. The back side surface can interface to a vacuum,
hydrogen gas,
high pressure dry nitrogen, clear HV oil, glass, or any convenient
highly transparent
and insulating medium on the high voltage back side of the cathode.
Call this high
voltage side of the cathode the cathode back side. The back side is
the surface
opposite the hydrogen loading surface, Call a cell having such a two
sided cathode a
back side cell. Accomplishing this in a practical manner requires
formation of a
surface layer on the cathode back side surface which reduces the rate
of hydrogen
evolution from the back side. Such a layer could be an insulating
oxide layer thin
enough to support electron tunneling, but not excessive deuterium or
helium
tunneling, or could be a low diffusion rate metal thin film, like a
gold or copper alloy.
A back side cell allows diffusion to occur through the cathode, the
hydrogen coming in
the front side and out the back side. The diffusion rate out the back
side is controlled
such that the hydrogen fugacity is maintained at an adequate level,
while the
diffusion rate is simultaneously maintained. Call this technique back
side deloading.
A high density of electrons at the cathode high voltage back side
surface and just
beneath the back side surface increases both the hydrogen final
density and
diffusion rate throughout the cathode, especially if it is thin. It
also increases the
probability of wave function collapse of surface deuterons due to
Stark effect orbital
stressing due to high electric field conditions at the cathode back
side surface and
immediate subsurface.
Application of a powerful magnetic field parallel to the cathode
vacuum surface
incrementally stresses the deuteron orbitals there via the Paschen-
Back effect and
the formation of Rydberg orbitals, which, in addition to
destabilizing electron
waveforms and reducing the discreteness of normal quantum effects,
also increases
the probability of electrons locating within the volume of the
nucleus or experiencing
simultaneous wave function collapse with and within it. A strong
laser beam nearly
parallel to but striking the cathode back side surface increases the
above combined
field effects dramatically.
An alternative arrangement is to orient the powerful magnetic field
as normal to the
cathode back side surface interface. In this case the laser beam
effects are diluted
somewhat due to being normal to the magnetic field, though the vector
sum of the
fields is still enhanced.
BACKSIDE DE-LOADING ISSUES
Backside de-loading is a method which has good rationale within the
deflation
fusion model. It permits continued high tunneling rates even after
high loading is
achieved. The problem then is to achieve the backside de-loading in a
practical way.
The key is establishing a backside diffusion barrier, and using the
right crossbarrier
potential in order to match the de-loading and loading rates so as to
sustain
high hydrogen fugacity. It is also an objective to provide a high
electron charge
density immediately opposite the de-loading barrier. One means of
increasing
charge density is to increase field strength by using a high
dielectric strength
material opposite the barrier. One means of suppressing hydrogen
diffusion is to
make the potential of the back side surface extremely negative, thus
making escape
of positive hydrogen nuclei more suppressed.
Now for a differing approach to back side de-loading. One way to
achieve many of
these objectives is to make the back side an anode immersed in water.
See Figure 4.
The water acts as the dielectric. The field strength across the two
layer anode-water
interphase is well over 10^6 V/m at a few volts electrolysis potential.
The anodic diffusion barrier can be deposited and even maintained or
healed by
anodization. 14 The target for hydrogen tunneling then is OH-
molecules in the
interphase, and any free electrons that might be ionized off them and
attached to
the anodized barrier.
One problem with this approach is keeping the electrons from
tunneling across the
backside barrier to the hydrogen instead of the hydrogen tunneling
through the back
side barrier to the electrons. The down side to electron tunneling
through the
backside barrier is (1) deflation fusion is accomplished best by
simultaneous
deuteron tunneling to an electron and (2) fusion on the front side of
the barrier will
cause disruption of the lattice, destruction of the barrier, and
possible helium
blockage.
Preventing the above problems should be possible by energetically
denying them by
driving front side electrolysis at a much higher voltage once loading
is complete.
This can best be accomplished using a coordinated pulsed mode.
Operating with a
superimposed pulse, applied simultaneously on both the front and back
side
potentials, to trigger hydrogen barrier tunneling, is efficient
because it gives the
lattice time to diffuse replacement hydrogen, backside gas a chance
to dissipate, and
the interphase to recover, while providing maximum fugacity during
the pulse.
An alternative may be, on the back side, to use pulsed AC on top of a
DC trickle
current used to sustain the anodized layer. Very high frequency high
voltage AC
intervals with low duty cycles, on the back side, would cause
tunneling directions
across the backside of the barrier to switch directions, alternating
many times per
volume diffused, and thereby increasing fusion prospects per diffused
atom. It also
increases the probability of OH- de-ionization, loosing free
electrons to attach to the
backside diffusion barrier.
Horace Heffner
http://www.mtaonline.net/~hheffner/
