Hi Derek, James,

Thanks for your response.

Rise time was measured with a high-bandwidth scope, so rise time 
measurements are being limited.

It is my understanding is too that broad frequency spectrum will be the 
result of faster rise time.  Which is why I am having hard time with this.

Close-field probing shows higher noise above the die, so that could be one 
of the problems.  The ASIC drives high-speed signals to a connector, which 
connect to a host through cable.

I am interested in understanding the root cause of the noise occurring at 
very high frequency that what one would expect from the signal.

Regards
Ravinder Ajmani
HGST, a Western Digital company
5601 Great Oaks Pkwy
San Jose, CA 95119-1003
[email protected]




Derek Walton <[email protected]> 
03/24/2014 06:08 AM
Please respond to
Derek Walton <[email protected]>


To
[email protected]
cc

Subject
Re: [PSES] Higher EMI from ASIC built with new process






Hi Ravinder, 

James's comment made me wonder about a statement you made about rise times 
being the same. Are you sure what you are seeing isn't the limit of your 
measuring technique? A broader noise spectrum may be due to a faster rise 
time that you are not seeing in the time domain. I too have observed that 
flip chips exhibit more heat-sink coupling.

Also, do not rely on data sheets for these numbers, they can differ 
wildly.

Can you alter the behavior of the chip to determine if one section of 
circuitry is responsible? e.g. output buffers..

Are the emissions from the whole package? do any of the signals from the 
ASIC leave the PWB?  I recall fixing a problem with a board where the ASIC 
powered a front panel LED. That LED didn't rearly need the nS rise times 
from the ASIC.

Keep posting clues...

Sincerely,

Derek
L F Research.

-----Original Message-----
From: Pawson, James <[email protected]>
To: EMC-PSTC <[email protected]>
Sent: Mon, Mar 24, 2014 4:46 am
Subject: Re: [PSES] Higher EMI from ASIC built with new process

Hello Ravinder,
 
I wasn’t going to answer this as you were asking the experts ;)
 
Flip chips couple very well into their heatsinks compared to older 
wirebond packages as the silicon is much closer to the top surface. 
Perhaps try grounding/decoupling the heatsink or changing to a ceramic 
material for diagnosis of the problem?
 
Also, the package bond inductance will probably have reduced. You could 
look at increasing the decoupling, especially on any digital core and 
driver pins.
 
Has the manufacturer provided updated reference schematics for the new 
chip?
 
Rgds
James Pawson
EchoStar Europe
 
From: [email protected] [mailto:[email protected]] 
Sent: 23 March 2014 01:39
To: [email protected]
Subject: [PSES] Higher EMI from ASIC built with new process
 

Hi Experts, 

I am comparing EMI from two ASICs.  Both have identical rise/fall times 
and signal amplitude.  Yet the ASIC built with the later technology not 
only has significantly higher radiated emissions, but also shows much 
broader noise spectrum.  PCB stackup and layout is identical.  Please help 
me understand what other factors can be responsible for this anomaly. 

The older ASIC uses a wirebond package, whereas the new ASIC has flip chip 
package. 

Regards
Ravinder Ajmani
HGST, a Western Digital company
5601 Great Oaks Pkwy
San Jose, CA 95119-1003
[email protected]
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