Dear Horace, when I read in your draft 
http://www.mtaonline.net/~hheffner/DeflationFusion.pdf "a cathode can be loaded 
electrolytically from one side, the electrolyte side, and yet be a charged to 
millions of volts at the back side surface", suspicions of heresy can't help 
rising again, you mean "charged to a high surface charge density" don't you? 
The cathode is "at ground potential", you say so yourself in the draft, any 
high voltage is across an insulator on the ++ anode, right? Here is your 
drawing again for convenience:

>                         GGGGGGGGGGGG
>                         G          G
>                         G          G
>                         G          G
>                         G          G
>         |  +          X|G          G++
>         |..+..........X|G          G++
>         |  +          X|G          G++
>         |  +          X|G          G++
>         |  +          X|G          G++
>         ---------------|G          G
>                        |G          G
>                        |G          G
>                        |G          G
>                        |G          G
>                        |GGGGGGGGGGGG
>                        |
>                     Laser
> 
>      Key:
>          -| - Thin glass
>           G - Surface of thick insulator
>           + - Low voltage electrolysis anode
>           X - Thin film CF cathode at ground potential
>          ++ - High voltage anode
>          .. - Electrolyte level

I assure you that what matters for high charge density on the back side of your 
cathode is not the absolute voltage. The charge density can be easily derived 
from basic capacitor design equations see e.g. 
http://hyperphysics.phy-astr.gsu.edu/hbase/electric/pplate.html q=C*V, and 
C=epsilon*A/d =>

q/A = epsilon*V/d = k*epsilon0*V/d

where epsilon0 is permittivity of vacuum, k is the dielectric constant of the 
material, V is capacitor voltage and d is dielectric thickness. So a high 
dielectric constant k helps, and so does a high average field V/d (which 
requires a high dielectric strength --usually expressed in kV/mm), but absolute 
voltage is irrelevant, although it will be typically high e.g. if you use a 
50kV/mm dielectric strength material of thickness 1mm then you will have to 
apply 50kV to get the highest possible charge density.

BTW I have a better idea than my previous suggestions for the ++ anode 
material, use an NaCl solution, it's an excellent conductor, it's transparent, 
and it's easy to make an electrical connection to (just dip the HV wire into 
it!), all you need is walls to contain it.

Hope this helps,

Michel

----- Original Message ----- 
From: "Horace Heffner" <[EMAIL PROTECTED]>
To: <[email protected]>
Sent: Wednesday, August 01, 2007 4:39 PM
Subject: Re: [Vo]:Re: Electron fugacity, deuteron fugacity, and applied fields



On Jul 31, 2007, at 11:44 PM, Michel Jullian wrote:

> No heresy then :) Yes indeed your parallel plate capacitor  
> arrangement on the back side (right hand  side) of the cathode is  
> capable of increasing electron density there, good idea!
>
> A few comments:
>
> 1/ Any point in using two dielectric materials, why not just  
> metallize the right hand side of the thin glass to make the HV anode?

The thought was to start out with an approximation to something that  
consistently works - something along the lines of Fig. 1 in:

http://lenr-canr.org/acrobat/SzpakSevidenceof.pdf

It would certainly be of much interest to place a pre-prepared co- 
depsited cathode material in gas phase, in which case the surface  
would be directly exposed to HV in hydrogen, with loading hopefully  
sustained by the applied field.



>
> 2/ Assuming you agree with 1/, the charge density on the RHS of the  
> cathode only depends on the ratio of the HV to the thickness of the  
> dielectric and on the dielectric constant, the absolute value of  
> the HV doesn't matter right?

I've been turning this over in my head for days.  I don't know.  I  
don't understand the results of Szpak cell with a mere 6000 V.  This  
is something that needs to be investigated I think.


>
> 3/ Why not make the HV anode in the shape of a grid, or a uniform  
> metallization with a small hole, so you could shine the laser at  
> 90° to the cathode?

A grid may work but will only maximize loading if fully immersed in  
electrolyte and this creates some of the interpretation problems  
already associated with the Szpak cell arrangement.  It might work if  
the grid were in hydrogen gas.  A HF AC superimposed over the DC  
might provide extra ionization if needed to keep the loading up.

The back side cell seems to be a solution to this problem, though a  
HV side gas phase loaded cell (loaded from the HV side) would be much  
better I think if loading can be maintained.  An approach to the gas  
side loading might be to co-deposit a D-Pd layer on on a copper grid  
or just copper wires and then use the Claytor gas loading method.

Another alternative is a gas-gas type cell, where hydrogen is  
supplied from the front side in gas phase, through a thin Pd layer -  
but there is no evidence to suggest such a cell would work, the H  
fugacity would be low - it would be a shot in the dark.

I've considered the idea of shining a laser down a hole in the  
cathode, or an outside loaded  cathode tube, that just fits the  
beam.  In that case there is probably not much sense in keeping the  
electrode highly charged.  The effect would rely entirely on the  
short term AC fields of the laser.  I like the idea of starting with  
a known, the Szpak cell arrangement, and seeing if very high DC  
fields in modestly different arrangements than the Szpak cell have  
any effect.

Another arrangement might be a triode arrangement, where current can  
be run through the cathode from end to end independently from the  
loading or field potentials.  This current can be AC.  Its purpose is  
to cause lateral diffusion, and thus increase the tunneling rates and  
stresses in the cathode. This was tried I think, without success,  
back when few cells worked.  It still might be interesting to try on  
a reliable co-deposited cell.

One thing very bad about the back side cell arrangement where the HV  
back side business end is deposited on an insulator is the cathode  
will undoubtedly destroy itself by de-adhering.  I figure it should  
be good enough to see differing SEM results, microscopically visible  
melting changes, etc. I don't know what material would be good to  
limit diffusion rates and yet keep loading up.  It would probably be  
an alloy.  I would be nice to find a high loading low diffusion rate  
material that could be made thick, and which could ablate away  
surface destroyed by fusion reactions. An alternative may be a gas  
phase equivalent to a fluidized bed.

Horace Heffner
http://www.mtaonline.net/~hheffner/

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